Amplifiers - Linear & Power - CHIP
v04.0512
Typical Applications
The HMC906 is ideal for: • Point-to-Point Radios • Poi...
Amplifiers - Linear & Power - CHIP
v04.0512
Typical Applications
The HMC906 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space
Functional Diagram
HMC906
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz
Features
Saturated Output Power: +34 dBm @ 22% PAE High Output IP3: +43 dBm High Gain: 23 dB DC Supply: +6V @ 1200 mA No External Matching Required Die Size: 3.18 x 2.73 x 0.1 mm
General Description
The HMC906 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 27.3 and 33.5 GHz. The HMC906 provides 23 dB of gain, and +34 dBm of saturated output power and 22% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1]
Frequency Range
Parameter
Min.
Typ.
Max.
27.3 - 31.5
Min.
Typ.
Max.
31.5 - 33.5
Gain Gain Variation Over Temperature Input Return Loss
20
23
0.022
10
14
20
23
0.026
10
14
Output Return Loss Output Power for 1 dB Compression (P1dB)
8
12
31
33
10 30.5
12 32.5
Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2]
34
40
43
33.5
39
42
Total Supply Current (Idd) [1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement take...
