HMC930A

Data Sheet GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A FEATURES High output power for 1 dB compression (P1dB): 22 dBm High saturated output power (PSAT): 24 dBm High gain: 13 dB High output third-order intercept (IP3): 33.5 dBm Supply voltage: 10 V at 175 mA 50 Ω matched input/output Die size: 2.82 mm × 1.50 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to ACG1 ACG2 ACG4 ACG3 13738-001 FUNCTIONAL BLOCK DIAGRAM 34 HMC930A 2 VGG2 1 RFIN RF...