4Mbyte. HMS1M32M8LA Datasheet

HMS1M32M8LA Datasheet PDF


HMS1M32M8LA
HANBit
HMS1M32M8LA
SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V
Part No. HMS1M32M8LA
GENERAL DESCRIPTION
The HMS1M32M8LA is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit
configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.
The HMS1M32M8LA also support low data retention voltage for battery back-up operations with low data retention current.
Eight chip enable inputs, (/CE0, /CE1, /CE2, /CE3, /CE4, /CE5, /CE6, /CE7) are used to enable the modules 4M bytes
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Part identification
- HMS1M32M8LA : SIMM design
w Access times : 55ns, 70ns
w High-density 4MByte design
w High-reliability, low-power design
w Single + 5V ±0.5V power supply
w Low data retention voltage : 2V(min)
w Three state output and TTL-compatible
w FR4-PCB design
w Low profile 72-Pin SIMM
www.DataSheet4U.com
OPTIONS
w Timing
55ns access
70ns access
w Packages
72-pin SIMM
72-pin ZIP
MARKING
-55
-70
M
Z
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vcc 25 DQ13 49 DQ27
2 Vcc 26 DQ5 50 DQ19
3 Vss 27 DQ14 51 A3
4 Vss 28 DQ6 52 A10
5 Vss 29 DQ15 53 A4
6 Vss 30 DQ7 54 A11
7 Vss 31 /OE 55 A5
8
DQ0
32
/CE3
56
A12
9
DQ8
33
A15
57
Vcc
10 DQ1 34 A14 58 A13
11 DQ9 35
/CE6
59
A6
12 DQ2 36
/CE7
60 DQ20
13 DQ10 37
/CE4
61 DQ28
14 DQ3 38
/CE5
62 DQ21
15 DQ11 39 A17 63 DQ29
16 Vcc 40 A16 64 DQ22
17 A0 41 /CE2 65 DQ30
18 A7 42 Vss 66 DQ23
19 A1 43 DQ24 67 DQ31
20 A8 44 DQ16 68 Vss
21 A2 45 DQ25 69 A18
22 A9 46 DQ17 70 /WE
23 DQ12 47 DQ26 71 /CE1
24 DQ4 48 DQ18 72 /CE0
SIMM
TOP VIEW
1 HANBit Electronics Co.,Ltd.


Part HMS1M32M8LA
Description SRAM MODULE 4Mbyte
Feature HMS1M32M8LA; HANBit HMS1M32M8LA SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V Part No. HMS1M32M8LA GENE.
Manufacture Hanbit Electronics
Datasheet
Download HMS1M32M8LA Datasheet


HANBit HMS1M32M8LA SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER, HMS1M32M8LA Datasheet





HMS1M32M8LA
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31
A0-A18
32
19
/CE7
/CE6
/CE5
www.DataSheet4U.com
/OE
/CE4
A0-18
DQ24-31
/WE
/OE U4
/CE
A0-18
DQ16-23
/WE
/OE U3
/CE
A0-18
DQ 8-15
/WE
/OE U2
/CE
A0-18
DQ 0-7
/WE
/OE U1
/CE
/CE3
/CE2
/CE1
/WE
/OE
/CE0
HMS1M32M8LA
A0-18
DQ24-31
/WE
/OE U8
/CE
A0-18
DQ16-23
/WE
/OE U7
/CE
A0-18
DQ 8-15
/WE
/OE U6
/CE
A0-18
DQ 0-7
/WE
/OE U5
/CE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
2 HANBit Electronics Co.,Ltd.



HMS1M32M8LA
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE: X means dont care
HMS1M32M8LA
/OE /CE /WE
X HX
H LH
L LH
XLL
DQ
HIGH-Z
HIGH-Z
Q
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD 8W
Storage Temperature
TSTG
-65oC to +150oC
Operating Temperature
TA 0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
Supply Voltage
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VCC
4.5V
5.0V
VSS 0 0
Input High Voltage
VIH 2.2 -
Input Low Voltage
VIL
* VIL(Min.) = -2.0V (Pulse Width 10ns) for I 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA
-0.5*
-
MAX
5.5V
0
Vcc+0.5V**
0.8V
DC AND OPERATING CHARACTERISTICS (1)
(0oC TA 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
Input Leakage Current
VIN = Vss to Vcc
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=5.0V, Temp=25 oC
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0mA
IOL = 8.0mA
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
3
SYMBOL MIN MAX
ILI -8 8
IL0 -8 8
VOH 2.4
VOL 0.4
UNITS
µA
µA
V
V
HANBit Electronics Co.,Ltd.






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