HN29W12811

HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) ADE-203-1183C (Z) Rev. 2.0 Feb. 7, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all sector address). Features On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V Organization  AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)  Data register: (2048 + 64) bytes Multi-level memory cell  2 bit/per memory cell Automatic programming  Sector program time: 2.5 ms (typ)  System bus free  Address, data latch function  Internal automatic program verify function  Status data polling function Automatic erase  Single sector erase time: 1.0 ms (typ)  System bus free  Internal automatic erase verify function  Status data polling function HN29W12811 Series Erase mode  Single sector erase ((2048 + 64) byte unit) Fast serial read access time:  First access time: 50 µs (max)  Serial access time: 60 ns (max) Low power dissipation:  ICC2 = 40 mA (max) (Read)  ISB2 = 50 µA (max) (Standby)  ICC3/ICC4 = 40 mA (max) (Erase/Program)  ISB3 = 5 µA (max) (Deep standby) The following arc...