HP4936DY

HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Features Logic Level Gate Drive 5.8A, 30V rDS(ON) = 0.037Ω at ID = 5.8A, VGS = 10V rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D1(8) D1(7) Ordering Information PART NUMBER HP4936DY PACKAGE SO-8 BRAND P4936DY S1(1) G1(2) NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HP4936DYT. D2(6) D2(5) S2(3) G2(4) Packaging SO-8 ©2001 Fairchild Semiconductor Corporation HP4936DY Rev. B HP4936DY Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HP4936DY Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . ...