HPD650R600SA

Silicon N-Channel Power MOSFET HPD650R600SA ○R General Description： HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 9A 125 W 0.52 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating Junct...