Silicon N-Channel Power MOSFET HPU700R950SA
General Description：
HPU700R950SA, the silicon N-channel Enhanced MOSFETs, ...
Silicon N-Channel Power
MOSFET HPU700R950SA
General Description：
HPU700R950SA, the silicon N-channel Enhanced
MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the RoHS standard.
VDSS ID PD(TC=25℃) RDS(ON)Typ
Features：
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
○R
700 V 7A 112 W
0.78 Ω
Symbol
VDSS
ID IDMa1 VGSS EAS a2 dv/dt a3
PD TJ，Tstg
TL
Parameter Drain-to-Source
Voltage(VGS=0V)
Continuous Drain Current Pulsed Drain Current Gate-to-Source
Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(T=25°...
