HQP1498QF

CYStech Electronics Corp. Quadruple High Voltage PNP Epitaxial Planar Transistor Built-in Base Resistor Spec. No. : C900QF Issued Date : 2009.10.30 Revised Date : 2009.11.20 Page No. : 1/6 HQP1498QF Description High breakdown voltage. (BVCEO=-400V) Low saturation voltage, typical VCE(sat) =-0.3V at Ic/IB =-20mA/-1mA. Complementary to HQN2498QF Pb-free package Equivalent Circuit HQP1498QF Outline SOP-10 The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature HQP1498QF Preliminar Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -7 -300 1.5 150 -55~+150 y Unit V V V mA W °C °C CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE R fT Cob Min. -400 -400 -7 100 30 0.7 Typ. -0.3 -0.7 100 13 Max. -100 -10 -100 -0.5 -0.9 -3.7 270 1.3 Unit V V V nA nA nA V V V kΩ MHz pF Spec. No. : C900QF Issued Date : 2009.10.30 Revised Date : 2009.11.20 Page No. : 2/6 Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-100mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty...