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HRC0103A

Hitachi Semiconductor

Silicon Schottky Barrier Diode

HRC0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-624 (Z) Rev 0 May. 1998 Features • Low forward voltage d...


Hitachi Semiconductor

HRC0103A

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HRC0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-624 (Z) Rev 0 May. 1998 Features Low forward voltage drop and suitable for high effifiency rectifying. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HRC0103A Laser Mark S1 Package Code UFP Outline Cathode mark Mark 1 S1 2 1. Cathode 2. Anode HRC0103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Symbol V *1 RRM Value 30 100 Unit V mA A °C °C I o*1 IFSM Tj *2 3 125 –55 to +125 Tstg 1. See from Fig.3 to Fig.5 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Thermal resistance Note 1. Symbol VF IR Rth(j-a) Min — — — Typ — — 500 Max 0.44 50 — Unit V µA Test Condition I F = 100 mA VR = 30V ° C/W Polyimide board *1 Polyimide board 20hx15wx0.8t 1.5 3.0 0.8 1.5 Unit: mm 2 HRC0103A Main Characteristic -2 1.0 Pulse test 10 -1 10 Pulse test 10 -3 10 -2 Reverse current I R (A) Forward current I F (A) Ta=75°C 10 -4 10 -3 Ta=25°C Ta=75°C 10 -5 10 -4 Ta=25°C 10 -6 10 -5 10 -6 0 0.2 0.4 0.6 0.8 1.0 10 0 -7 10 20 30 40 50 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 0.10 0A t T Tj =25°C Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 0.6 0V Forward power dissipation Pd (W) 0.08...




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