HRF502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-245C(Z) Rev 3 Sep. 1997 Features
• Low forward voltage dr...
HRF502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-245C(Z) Rev 3 Sep. 1997 Features
Low forward
voltage drop and suitable for high effifiency rectifying. DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRF502A Laser Mark 502A Package Code DO-214
Outline
Cathode mark Mark
502A
1 2
Lot No.
1. Cathode 2. Anode
HRF502A
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse
voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol V
*1 RRM
Value 20 5
Unit V A A °C °C
I o*1 I FSM Tj Tstg
*2
100 125 -40 to +125
1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward
voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR — Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min — — 250 — — Typ — — — 90 42 Max 0.40 1.0 — — — Unit V mA V Test Condition I F = 5A VR = 20V C=200pF , R=0 Ω , Both forward and reverse direction 1 pulse.
*1
°C/W Glass epoxy board Tc=25°C
Land size
3.5 6.8 2.0
Unit: mm
2
HRF502A
Main Characteristic
2
10
Pulse test
10
-2
Pulse test Ta=75°C
Forward current I F (A)
10 Ta=75°C 1.0
Reverse current IR (A)
10
-3
Ta=25°C
10
-4
Ta=25°C
10
-1
10
-2
10
-5
10
-3
0
0.1
0.5 0.4 Forward
voltage V F (V)
0.2
0.3
0.6
10
-6
0
5
10 20 15 Reverse
voltage VR (V)
25
Fig.1 Forward current Vs. Forward voltag...