HRFZ44N
Data Sheet December 2001
49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is ma...
HRFZ44N
Data Sheet December 2001
49A, 55V, 0.022 Ohm, N-Channel UltraFET Power
MOSFET
This N-Channel power
MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low
voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.
Features
49A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.Fairchild.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER HRFZ44N PACKAGE TO-220AB BRAND HRFZ44N
G
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
©2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B
HRFZ44N
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 55 55 ±20 49 160 0.227 120 0.8 -55 to 175 300 260 UNITS V V V A A A2s W W/oC oC
oC oC
Drain to Source
Voltage (Note 1) . ....