HRLU150N10K

HRLD150N10K_HRLU150N10K HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A D-PAK I-PAK 2 1 1 32 3 HRLD150N10K HRLU150N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅)* Power Dissipation (TC = 25୅) - Derate above 25୅ 100 70 * 49 * 245 * ρ20 265 11 3 110 0.73 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 1.4 50 110 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡ HRLD150N10K_HRLU150N10K Ele...