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HRP32

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRP32 Silicon Schottky Barrier Diode for Rectifying ADE-208-305A(Z) Rev 1 Oct. 1997 Features • • Good for high-frequenc...


Hitachi Semiconductor

HRP32

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Description
HRP32 Silicon Schottky Barrier Diode for Rectifying ADE-208-305A(Z) Rev 1 Oct. 1997 Features Good for high-frequency rectify. High reliability with glass seal. Ordering Information Type No. HRP32 Cathode Band Green Package Code DO-41 Outline 1 Cathode band 2 1. Cathode 2. Anode HRP32 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Junction temperature Storage temperature Note: Note: Symbol V *1 RRM Value 90 1.0 125 -40 to +125 Unit V A °C °C I o*1,2 Tj Tstg 1. See from Fig.1 to Fig.3 2. 20msec sine wave Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF IR Min — — Typ — — Max 0.80 1.0 Unit V mA Test Condition I F = 1.0A VR = 90V 2 HRP32 Main Characteristic 1.4 Forward power dissipation Pd (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Average rectified current Io (A) Fig.1 Forward power dissipation Vs. Average rectified current Reverse power dissipation Pd (W) D=1/6 Sin D=1/3 D=1/2 DC 5 D=5/6 4 D=2/3 3 D=1/2 2 Sin 1 0 0 20 40 60 80 100 120 Reverse voltage V R(V) Fig.2 Reverse power dissipation Vs. Reverse voltage 1.2 5mm 2 mm 1.0 (A) O DC D=1/2 2 mm f=1MHz Pulse test 10 (pF) 3 Print Board Rth=153°C/W VR=45V Tj=125°C Average forward current I 0.8 0.6 D=1/6 0.4 D=1/3 0.2 0 -25 Sin Capacitance C 10 2 10 0 25 50 75 100 125 150 1.0 10 Reverse voltage V R (V) Fig.4 Capacitance Vs. Reverse voltage 10 2 Ambient temperature Ta (°C) Fig.3 Average forwa...




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