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HRU0302 Datasheet

Part Number HRU0302
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Rectifying
Datasheet HRU0302 DatasheetHRU0302 Datasheet (PDF)

HRU0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-235G(Z) Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HRU0302A Laser Mark Z Package Code URP Outline Cathode mark Mark 1 Z 2 1. Cathode 2. Anode HRU0302A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified.

  HRU0302   HRU0302






Part Number HRU0302A
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Rectifying
Datasheet HRU0302 DatasheetHRU0302A Datasheet (PDF)

HRU0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-235G(Z) Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HRU0302A Laser Mark Z Package Code URP Outline Cathode mark Mark 1 Z 2 1. Cathode 2. Anode HRU0302A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified.

  HRU0302   HRU0302







Silicon Schottky Barrier Diode for Rectifying

HRU0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-235G(Z) Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HRU0302A Laser Mark Z Package Code URP Outline Cathode mark Mark 1 Z 2 1. Cathode 2. Anode HRU0302A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *1 RRM Value 20 300 Unit V mA A °C °C I O*1 I FSM Tj Tstg *2 3 125 –55 to +125 Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth(j-a) Min — — — — Typ — — 70 440 Max 0.40 100 — — Unit V µA pF Test Condition I F = 300 mA VR = 20V VR = 0V, f = 1 MHz ° C/W Polyimide board *1 Notes 1. Polyimide board 20hx15wx0.8t 0.8 1.5 3.0 1.5 Unit: mm 2 HRU0302A Main Characteristic -1 10 Pulse test 1.0 Ta=75°C Forward current IF Reverse current I R (A) (A) 10 Pulse test -2 10 10 -1 10 -3 Ta=75°C 10 -4 10 -2 Ta=25°C Ta=25°C 10 -5 10 -3 10 -4 0 0.2 0.4 0.6 0.8 1.0 10 -6 0 5 10 15 20 25 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 10 2.


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