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HRW0203A

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRW0203A Silicon Schottky Barrier Diode for Rectifying ADE-208-014C (Z) Rev 3 Oct. 1997 Features • Low forward voltage ...


Hitachi Semiconductor

HRW0203A

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HRW0203A Silicon Schottky Barrier Diode for Rectifying ADE-208-014C (Z) Rev 3 Oct. 1997 Features Low forward voltage drop and suitable for high effifiency rectifying. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0203A Laser Mark S5 Package Code MPAK Outline 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HRW0203A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Symbol V *1 RRM Value 30 200 Unit V mA A °C °C I o*1 IFSM Tj *2 2 125 -55Å`+125 Tstg 1. See from Fig.1 to Fig.5, with polyimide board 2. 50Hz sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ — — 40 Max 0.50 50 — Unit V µA pF Test Condition I F = 200 mA VR = 30V VR = 0V, f = 1MHz 2 HRW0203A Main Characteristic 1.0 Tj=25 °C Tj=125 °C Forward current I F (A) 10 –1 Reverse current I R (A) 10 –2 10 –2 10 –3 10 –3 10 0 0.2 0.4 0.6 0.8 –4 1.0 10 10 2 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 0.20 Forward power dissipation Pd (W) 0A t T Tj =25°C 0.40 Reverse power dissipation Pd (W) 0V t t D= \ T D=5/6 0.15 t D= \ T D=1/6 D=1/3 Sin( ˘=180°) D=1/2 DC 0.30 T Tj =125°C D=2/3 D=1/2 0.20 Sin( ˘=180°) 0...




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