Datasheet
HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
The...
Datasheet
HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH
Radiation Hardened Dual, Non-Inverting Power
MOSFET Drivers
The radiation hardened HS-4424RH, HS-4424EH, HS-4424BRH and HS-4424BEH are non-inverting, dual, monolithic high-speed
MOSFET drivers designed to convert TTL level signals into high current outputs at
voltages up to 18V.
The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power
MOSFETs in high frequency applications.
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low
voltage lockout circuit that puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4424RH, HS-4424EH and 7.5V for the HS-4424BRH, HS-4424BEH.
Constructed with the dielectrically isolated Rad Hard Silicon Gate (RSG) Bi
CMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.
Detailed Electrical Specifications for these devices are contained in SMD 5962-99560.
Related Literature
For a full list of related documents, visit our website:
HS-4424RH, HS-4424EH, HS-4424BRH and HS-4424BEH device pages
Table 1. Table of Differences
Part Number
HS-4424RH, HS-4424BRH...