Switch. HS1-201HSRH-Q Datasheet

HS1-201HSRH-Q Datasheet PDF

Part HS1-201HSRH-Q
Description Radiation Hardened High Speed/ Quad SPST/ CMOS Analog Switch
Feature HS-201HSRH TM Data Sheet June 2000 File Number 4874 Radiation Hardened High Speed, Quad SPST, C.
Manufacture Intersil Corporation
Datasheet
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HS-201HSRH TM Data Sheet June 2000 File Number 4874 Rad HS1-201HSRH-Q Datasheet





HS1-201HSRH-Q
TM
Data Sheet
HS-201HSRH
June 2000
File Number 4874
Radiation Hardened High Speed, Quad
SPST, CMOS Analog Switch
The HS-201HSRH is a monolithic CMOS analog switch
featuring power-off high input impedance, very fast switching
speeds and low ON resistance. Fabrication on our DI RSG
process assures SEL immunity and only very slight
sensitivity to low dose rate (ELDRS). These Class V/Q
devices are tested and guaranteed for 300krad (Si) total
dose performance.
Power-off high input impedance enables the use of this
device in redundant circuits without causing data bus signal
degradation. ESD protection, overvoltage protection, fast
switching times, low ON resistance, and guaranteed
radiation hardness, make the HS-201HSRH ideal for any
space application where improved switching performance is
required.
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center (DSCC). The SMD numbers
listed here must be used when ordering flight units.
Detailed electrical specifications for this device are
contained in SMD 5962-99618. A ”hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP.
RANGE (oC)
5962F9961801VEC
HS1-201HSRH-Q
-55 to 125
5962F9961801QEC HS1-201HSRH-8
-55 to 125
5962F9961801VXC
HS9-201HSRH-Q
-55 to 125
5962F9961801QXC HS9-201HSRH-8
-55 to 125
5962F9961801V9A
HS0-201HSRH-Q
-55 to 125
HS1-201HSRH/PROTO HS1-201HSRH/PROTO -55 to 125
Features
• Electrically Screened to DSCC SMD 5962-99618
• QML Qualified per MIL-PRF-38535
• Radiation Performance
- Guaranteed Total Dose Performance . . . . . 300krad (Si)
- SEL Immune . . . . . . . . . . . . . . . . . . . . .DI RSG Process
- Only Very Slightly Sensitive to Low Dose Rates
(Vertical PNP and NPN device architectures)
• Overvoltage Protection (Power On, Switch Off). . . . . . . ±30V
• Power Off High Impedance . . . . . . . . . . . . . . . . . . . ±17V
• Fast Switching Times
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (Max)
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (Max)
• Low “ON” Resistance . . . . . . . . . . . . . . . . . . . 50(Max)
• Pin Compatible with Industry Standard 201 Types
• Operating Supply Range . . . . . . . . . . . . . . . . . ±10V to ±15V
• Wide Analog Voltage Range (±15V Supplies) . . . . . . . ±15V
• TTL Compatible
Applications
• High Speed Multiplexing
• Sample and Hold Circuits
• Digital Filters
• Operational Amplifier Gain Switching Networks
• Integrator Reset Circuits
Pinout
HS1-201HSRH, SBDIP (CDIP2-T16)
HS9-201HSRH, FLATPACK (CDFP4-F16)
TOP VIEW
A1 1
OUT1 2
IN1 3
V- 4
GND 5
IN4 6
OUT4 7
A4 8
16 A2
15 OUT2
14 IN2
13 V+
12 NC
11 IN3
10 OUT3
9 A3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000



HS1-201HSRH-Q
Die Characteristics
DIE DIMENSIONS
2667µm x 4623µm (105 mils x 182 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kÅ +/-1.0kÅ
Metallization
Type: Ti/AlCu
Thickness: 16.0kÅ +/- 2kÅ
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Metallization Mask Layout
OUT4
IN4
HS-201HSRH
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 105 A/cm2
Transistor Count
328
HS-201HSRH
GND
V-
IN1 OUT1
A4 A1
A3 A2
OUT3
IN3
V+ IN2
OUT2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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