N channel 60V MOSFET
HS50N06DA
1. Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect...
N channel 60V
MOSFET
HS50N06DA
1. Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
2. Feature
● RDS(ON)≦22mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability
VDS RDS(on)
ID
60 22 50
V mΩ A
3. Pin configuration
Order Number HS50N06DA
Package TO-252
TO-252
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. Oct,2012-Ver1.0
www.homsemi.com
1/5
N channel 60V
MOSFET
HS50N06DA
4. Absolute maximum ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous D...
