HSB649A

HI-SINCERITY MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2006.02.20 Page No. : 1/4 Description Low frequency power amplifier complementary pair with HSD669A. Absolute Maximum Ratings (TA=25°C) TO-126ML Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation ....................................................................................................................................... 1 W Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W Maximum Volt...