HSB83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-489A(Z) Rev 1 Nov. 1999 Features
• High reverse...
HSB83
Silicon Epitaxial Planar Diode for High
Voltage Switching
ADE-208-489A(Z) Rev 1 Nov. 1999 Features
High reverse
voltage. (VR=250V) CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB83 Laser Mark F7 Package Code CMPAK
Outline
3
2
1 1 NC 2 Anode 3 Cathode
(Top View)
HSB83
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse
voltage Reverse
voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg
*1
Value 300 250 300 2 100 125 -55 to +125
Unit V V mA A mA °C °C
1. Value at duration of 10msec.
Electrical Characteristics (Ta = 25°C)
Item Forward
voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — — — Max 1.2 0.2 100 3.0 100 pF ns Unit V µA Test Condition I F = 100 mA VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 mA, Irr = 3mA, RL = 100Ω
2
HSB83
Main Characteristic
-2 -6
10 10
(A)
10
-3
Forward current IF
10 10 10
-5
-6
Reverse current I R (A)
10
-4
10
-7
10
-8
-7
10
-8
10
-9
10-9 10
-10
0
0.2
0.4
0.6
0.8
1.0
10
-10
0
50
100
150
200
250
Forward
voltage V F (V) Fig.1 Forward current Vs. Forward
voltage
Reverse
voltage V R (V) Fig.2 Reverse current Vs. Reverse
voltage
f=1MHz
10
(pF) Capacitance C
1.0
10
-1
1.0
10 Reverse
voltage V R (V)
10
2
Fig.3 Capacitance Vs. ...