HSC2625

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HR200201 Issued Date : 1996.03.14 Revised Date : 2002.08.13 Page No. : 1/2 HSC2625 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-3P Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 80 W Maximum Voltages and Currents VCBO Collector to Base Voltage ....................................................................................... 450 V VCEO Collector to Emitter Voltage......................................................