Mixer. HSC276 Datasheet

HSC276 Datasheet PDF

Part HSC276
Description Silicon Schottky Barrier Diode for Mixer
Feature HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features • High for.
Manufacture Hitachi Semiconductor
Datasheet
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HSC276
HSC276
Silicon Schottky Barrier Diode for Mixer
Features
High forward current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design.
ADE-208-421A(Z)
Rev 1
Dec. 1998
Ordering Information
Type No.
HSC276
Laser Mark
C2
Package Code
UFP
Outline
Cathode mark
Mark
1 C2 2
1. Cathode
2. Anode



HSC276
HSC276
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Reverse voltage
Average rectified current
Junction temperature
VR
IO
Tj
Storage temperature
Tstg
Value
3
30
125
-55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Reverse voltage
Reverse current
Forward current
Capacitance
ESD-Capability*1
Symbol Min Typ Max Unit
VR 3 — — V
IR — — 50 µA
IF 35 — — mA
C — — 0.85 pF
— 30 — — V
Notes 1. Failure criterion ; IR 100µA at VR =0.5 V
Test Condition
IR = 1 mA
VR = 0.5V
VF = 0.5V
VR = 0.5V, f = 1 MHz
C=200pF , Both forward and reverse direction
1 pulse.
2




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