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HSC278 Datasheet

Part Number HSC278
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Schottky Barrier Diode
Datasheet HSC278 DatasheetHSC278 Datasheet (PDF)

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

  HSC278   HSC278






Part Number HSC277
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
Datasheet HSC278 DatasheetHSC277 Datasheet (PDF)

HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-413 (Z) Rev. 0 Dec. 1995 Features • Low forward resistance. (rf = 0.7 max) • Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Code UFP Outline Cathode mark 1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj .

  HSC278   HSC278







Part Number HSC276A
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Mixer
Datasheet HSC278 DatasheetHSC276A Datasheet (PDF)

HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836(Z) Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276A Laser Mark S5 Package Code UFP Outline Cathode mark Mark 1 S5 2 1. Cathode 2. Anode HSC276A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbo.

  HSC278   HSC278







Part Number HSC276
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Mixer
Datasheet HSC278 DatasheetHSC276 Datasheet (PDF)

HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55.

  HSC278   HSC278







Silicon Schottky Barrier Diode

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non.


2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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