TRANSISTOR. HSD882S Datasheet

HSD882S Datasheet PDF

Part HSD882S
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD882S NPN Epitaxial Planar Transistor Spec. No. : HE6544 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD882S Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSD882S NPN Epitaxial Pl HSD882S Datasheet




HSD882S
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882S
NPN Epitaxial Planar Transistor
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 1/5
Description
The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay
driver.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150 °C
Junction Temperature ........................................................................................................................................ 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) .................................................................................................................................. 750 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .............................................................................................................................................. 40 V
VCEO Collector to Emitter Voltage........................................................................................................................................... 30 V
VEBO Emitter to Base Voltage ................................................................................................................................................... 5 V
IC Collector Current.................................................................................................................................................................. 3 A
Electrical Characteristics (TA=25°C)
Symbol Min. Typ. Max.
BVCBO
40
-
-
BVCEO
30
-
-
BVEBO
5
-
-
ICBO - - 1
IEBO - - 1
*VCE(sat)
-
- 0.5
*VBE(sat)
-
-
2
*hFE1
30
-
-
*hFE2
160
-
500
fT - 90 -
Cob - 45 -
Unit
V
V
V
uA
uA
V
V
MHz
pF
Classification of hFE2
Rank
P
Range
160-320
E
250-500
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD882S
HSMC Product Specification



HSD882S
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 2/5
Current Gain & Collector Current
1000
125oC
25oC
100
75oC
hFE @ VCE=2V
10
1
10 100 1000
Collector Current-IC (mA)
10000
Saturation Voltage & Collector Current
1000
100
10
1
75oC
25oC
125oC
VCE(sat) @ IC=10IB
10 100 1000
Collector Current-IC (mA)
10000
Saturation Voltage & Collector Current
1000
Saturation Voltage & Collector Current
1000
100
10
1
75oC
125oC
25oC
VCE(sat) @ IC=40IB
10 100 1000
Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
100
10
1
75oC
125oC
25oC
VCE(sat) @ IC=20IB
10 100 1000
Collector Current-IC (mA)
10000
Capacitance & Reverse-Biased Voltage
100
1000
25oC
75oC
100
1
125oC
VBE(sat) @ IC=10IB
10 100 1000
Collector Current-IC (mA)
10000
HSD882S
Cob
10
0.1
1 10
Reverse-Biased Voltage (V)
100
HSMC Product Specification




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