HSD965

HI-SINCERITY MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 Description The HSD965 is suited for use as AF output amplifier and flash unit. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 750 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................................... 4...