HSM107S

HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F(Z) Rev 6 Sep. 1998 Features Low VF and high efficiency. HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM107S Laser Mark C5 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Peak forward current Non-Repetitive Peak forward surge current Average forward current Junction temperature Storage temperature Symbol VR I FM I FSM IO Tj Tstg *1 Value 8 0.1 0.5 50 125 –55 to +125 Unit V A A mA °C °C Notes: 1. Square wave, 10ms Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage ESD Capability *1 Symbol VR IR VF — Min 8 — — 100 Typ — — — — Max — 30 0.3 — Unit — µA V V Test Condition I R = 1.0 mA VR = 5 V I F = 10 mA C=200pF, Both forward and reverse direction 1 pulse Notes: 1. Failure Criterion ; IR ≥60µA at V R =5V 2 HSM107S Main Characteristic -2 10-1 10 10 -2 Forward current IF 10-3 -4 Reverse current I R (A) 0.1 0.2 0.5 (A) 10 -3 10 10 -4 10 -5 -6 10 -5 10 10 -7 0 0.3 0.4 10 -6 0 2 4 6 8 10 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig...