HSM126S

HSM126S Silicon Schottky Barrier Diode for System Protection ADE-208-111C (Z) Rev. 3 May 1995 Features HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. Low VF and low leakage current. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM126S Laser Mark S14 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM126S Absolute Maximum Ratings (Ta = 25°C)*3 Item Repetitive peak reverse voltage Average forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Sine wave, Two device total 2. 50Hz half sine wave 1 pulse 3. Per one device Symbol VRRM I O* 1 2 Value 20 200 2 125 –55 to +125 Unit V mA A °C °C I FSM * Tj Tstg Electrical Characteristics (Ta = 25°C)* Item Reverse current Forward voltage Capacitance Note: Per one device Symbol IR VF C Min — — — Typ — — 40 Max 2.0 0.35 — Unit µA V pF Test Condition VR = 5V I F = 10mA VR = 0V, f = 1MHz 10 Pulse test 1.0 Forward current I F (A) 10 –1 Ta = 75°C 10 –2 Ta = 25°C 10 –3 10 –4 10 –5 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) 1.0 Fig.1 Forward current Vs. Forward voltage 2 HSM126S 10 –2 Pulse test Reverse current I R (A) 10 –3 10 –4 Ta = 75°C 10 –5 Ta = 25 °C 10 –6 10 –7 0 5 10 15 20 25 30 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse...