HSM2693A

HSM2693A Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-094B (Z) Rev. 2 Jun. 1993 Features Low forward resistance. (rf = 0.9 max) Low capacitance. (C = 1.2pFmax) MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2693A Laser Mark B4 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM2693A Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature Note: Two device total Symbol VR Pd* Tj Tstg Topr Value 35 150 125 –45 to +125 –20 to +60 Unit V mW °C °C °C Electrical Characteristics (Ta = 25°C)* Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Note: Per one device Symbol VR IR VF C rf Min 35 — — — — Typ — — — — — Max — 50 1.0 1.2 0.9 Unit V nA V pF Ω Test Condition I R = 10µA VR = 25V I F = 10mA VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 2.0 f = 100MHz Forward resistance r f (Ω ) 1.5 1.0 0.5 0 10–4 10–3 Forward current I F (A) 10–2 Fig.1 Forward resistance Vs. Forward current 2 HSM2693A 10 f = 1MHz Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs. Reverse voltage IF = 2mA Forward resistance r f (Ω ) 10 1.0 10 –1 1.0 10 Frequency f (MHz) 102 Fig.3 Forward resistance Vs. Frequency 3 HSM2693A Package Dimensions Unit: mm 0.65 – 0.3 + 0.1 Laser Mark 0.4 – 0.05 + 0.10 0.16 – 0.06 + 0....