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HSM2694 Datasheet

Part Number HSM2694
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Epitaxial Planar Diode
Datasheet HSM2694 DatasheetHSM2694 Datasheet (PDF)

HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-095A (Z) Rev. 1 Jun. 1993 Features • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HSM2694 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction tem.

  HSM2694   HSM2694






Part Number HSM2694
Manufacturers Renesas
Logo Renesas
Description Silicon Epitaxial Planar Diode
Datasheet HSM2694 DatasheetHSM2694 Datasheet (PDF)

HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch REJ03G0110-0200Z (Previous: ADE-208-095A) Rev.2.00 Oct.08.2003 Features • Low forward resistance. (rf = 0.9 Ω max) • Low capacitance. (C = 1.2 pF max) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. Cathode 2. Cathode 3. Anode Rev.2.00, Oct.08.2003, page 1 of 4 HVM2694 Absolute Maxim.

  HSM2694   HSM2694







Silicon Epitaxial Planar Diode

HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-095A (Z) Rev. 1 Jun. 1993 Features • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HSM2694 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature Note: Two device total Symbol VR Pd* Tj Tstg Topr Value 35 150 125 –45 to +125 –20 to +60 Unit V mW °C °C °C Electrical Characteristics (Ta = 25°C)* Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Note: Per one device Symbol VR IR VF C rf Min 35 — — — — Typ — — — — — Max — 50 1.0 1.2 0.9 Unit V nA V pF Ω Test Condition I R = 10µA VR = 25V I F = 10mA VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 2.0 f = 100MHz Forward resistance r f (Ω ) 1.5 1.0 0.5 0 10–4 10–3 Forward current I F (A) 10–2 Fig.1 Forward resistance Vs. Forward current 2 HSM2694 10 f = 1MHz Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs. Reverse voltage IF = 2mA Forward resistance r f (Ω ) 10 1.0 10 –1 1.0 10 Frequency f (MHz) 102 Fig.3 Forward resistance Vs. Frequency 3 HSM2694 Package Dimensions Unit: mm 0.65 – 0.3 + 0.1 Laser Mark 0.4 – 0.05 + 0.10 0.16 – 0.06 + 0.10 .


2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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