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HSM2838C

Hitachi Semiconductor

Silicon Epitaxial Planar Diode

HSM2838C Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-029B (Z) Rev. 2 Features • Fast recovery time....


Hitachi Semiconductor

HSM2838C

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HSM2838C Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-029B (Z) Rev. 2 Features Fast recovery time. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2838C Laser Mark A6 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM2838C Absolute Maximum Ratings* 2 (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Notes: 1. Within 1µs forward surge current. 2. Per one device Symbol VRM VR I FM I FSM * IO Tj Tstg 1 Value 85 80 300 4 100 125 –55 to +125 Unit V V mA A mA °C °C Electrical Characteristics* (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time Note: Per one device IR C t rr Min — — — — — — Typ 0.76 0.88 0.97 — 0.5 — Max 1.0 1.0 1.2 0.1 2.0 3.0 µA pF ns Unit V Test Condition I F = 10mA I F = 50mA I F = 100mA VR = 80V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, RL = 50Ω HSM2838C 10 –1 Forward current I F (A) 10 –2 10 10 –5 10 –6 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) Ta –4 =7 5°C =2 5°C Ta =– 25° C 10 –3 Ta 1.0 Fig.1 Forward current Vs. Forward voltage –4 10 10 Reverse current I R (A) –5 10 10 10 10 10 –6 Ta = 75°C Ta = 50°C Ta = 25°C –7 –8 –9 Ta = 0°C Ta = –25°C –10 10 –11 0 60 80 20 40 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Rev...




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