HSM2838C
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-029B (Z) Rev. 2 Features
• Fast recovery time....
HSM2838C
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-029B (Z) Rev. 2 Features
Fast recovery time. MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM2838C Laser Mark A6 Package Code MPAK
Pin Arrangement
3
2
1
(Top View)
1 Anode 2 Anode 3 Cathode
HSM2838C
Absolute Maximum Ratings* 2 (Ta = 25°C)
Item Peak reverse
voltage Reverse
voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Notes: 1. Within 1µs forward surge current. 2. Per one device Symbol VRM VR I FM I FSM * IO Tj Tstg
1
Value 85 80 300 4 100 125 –55 to +125
Unit V V mA A mA °C °C
Electrical Characteristics* (Ta = 25°C)
Item Forward
voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time Note: Per one device IR C t rr Min — — — — — — Typ 0.76 0.88 0.97 — 0.5 — Max 1.0 1.0 1.2 0.1 2.0 3.0 µA pF ns Unit V Test Condition I F = 10mA I F = 50mA I F = 100mA VR = 80V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, RL = 50Ω
HSM2838C
10
–1
Forward current I F (A)
10
–2
10
10
–5
10
–6
0
0.6 0.8 0.2 0.4 Forward
voltage VF (V)
Ta
–4
=7 5°C =2 5°C Ta =– 25° C
10
–3
Ta
1.0
Fig.1 Forward current Vs. Forward
voltage
–4
10 10 Reverse current I R (A)
–5
10 10 10 10 10
–6
Ta = 75°C Ta = 50°C Ta = 25°C
–7
–8
–9
Ta = 0°C Ta = –25°C
–10
10
–11
0
60 80 20 40 Reverse
voltage VR (V)
100
Fig.2 Reverse current Vs. Rev...