HT1818-15A

GaN Hybrid Power Amplifier HT1818-15A Product Features GaN on SiC HEMT 2-Stage Amplifier 50ohms Matching Surface Mount Hybrid Type Small Size & Mass High Efficiency Applications RF Sub-Systems Base Station Repeater 4G/LTE system Small cell Package Type : NP-1EL Description The HT1818-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 1805 - 1880 Power Gain 30 33 35 Gain Flatness dB - 0.7 - Input Return Loss - -9.0 -5.0 Pout @ Average dBm - 33 - Pout @ Psat dBm 40.8 42 - ACLR* @ BW 10MHz LTE (PAPR 7.5dB) dBc - -39 -30 -54 - Drain Efficiency % 22 25 - Ids mA - 290 - V Supply Voltage V- -3.0 28 Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage -2.0 - Note 1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2. HT Series have internal DC blocking capacitors at the RF input and output ports CONDITION ZS = ZL = 50 ohm Amp : Idq1 = 50mA Idq2 = 105mA Pulse Width=20us, Duty...