HUF75321P3

HUF75321P3, HUF75321S3S Data Sheet June 1999 File Number 4360.6 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321. Features 35A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER© Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.semi.Intersil.com/families/models.htm Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75321P3 HUF75321S3S PACKAGE TO-220AB TO-263AB BRAND 75321P 75321S G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) 1 CAUTION: These dev...