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HUF75329D3S MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number HUF75329D3S
Description N-Channel MOSFET
Feature Data Sheet HUF75329D3S October 2013 N- Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFET s are manufactured using the innovative UltraFET process.
This advanced proces s technology achieves the lowest possib le onresistance per silicon area, resul ting in outstanding performance.
This d evice is capable of withstanding high e nergy in the avalanche mode and the dio de exhibits very low reverse recovery t ime and stored charge.
It was designed for use in applications where power eff iciency is important, such as switching regulators, switching converters, moto r drivers, relay .
Manufacture Fairchild Semiconductor
Datasheet
Download HUF75329D3S Datasheet

HUF75329D3S

 

 

 


 

 

 

Part Number HUF75329D3S
Description N-Channel MOSFET
Feature Data Sheet HUF75329D3S October 2013 N- Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFET s are manufactured using the innovative UltraFET process.
This advanced proces s technology achieves the lowest possib le onresistance per silicon area, resul ting in outstanding performance.
This d evice is capable of withstanding high e nergy in the avalanche mode and the dio de exhibits very low reverse recovery t ime and stored charge.
It was designed for use in applications where power eff iciency is important, such as switching regulators, switching converters, moto r drivers, relay .
Manufacture ON Semiconductor
Datasheet
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HUF75329D3S

 

 

 


 

 

 

Part Number HUF75329D3S
Description N-Channel MOSFET
Feature HUF75329D3, HUF75329D3S Data Sheet June 1999 File Number 4426.
4 20A, 55V, 0.
02 6 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manu factured using the innovative UltraFET process.
This advanced process techn ology achieves the lowest possible on-r esistance per silicon area, resulting i n outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exh ibits very low reverse recovery time an d stored charge.
It was designed for us e in applications where power efficien cy is important, such as switching regu lators, switching .
Manufacture Intersil Corporation
Datasheet
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HUF75329D3S

 

 

 

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