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HUF75329D3S Datasheet

Part Number HUF75329D3S
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet HUF75329D3S DatasheetHUF75329D3S Datasheet (PDF)

Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where pow.

  HUF75329D3S   HUF75329D3S






Part Number HUF75329D3S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet HUF75329D3S DatasheetHUF75329D3S Datasheet (PDF)

Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where pow.

  HUF75329D3S   HUF75329D3S







Part Number HUF75329D3S
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel MOSFET
Datasheet HUF75329D3S DatasheetHUF75329D3S Datasheet (PDF)

HUF75329D3, HUF75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed .

  HUF75329D3S   HUF75329D3S







N-Channel MOSFET

Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75329. Ordering Information PART NUMBER HUF75329D3ST PACKAGE TO-252AA BRAND 75329D Features • 20A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.onsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Packaging JEDEC TO-252AA G S GATE SOURCE DRAIN (FLANGE) ©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: HUF75329D3S/D HUF75329D3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate V.


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