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HUF75345G3 Datasheet

Part Number HUF75345G3
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet HUF75345G3 DatasheetHUF75345G3 Datasheet (PDF)

MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applica.

  HUF75345G3   HUF75345G3






Part Number HUF75345G3
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet HUF75345G3 DatasheetHUF75345G3 Datasheet (PDF)

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for.

  HUF75345G3   HUF75345G3







Part Number HUF75345G3
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel MOSFET
Datasheet HUF75345G3 DatasheetHUF75345G3 Datasheet (PDF)

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet June 1999 File Number 4365.7 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It w.

  HUF75345G3   HUF75345G3







N-Channel Power MOSFET

MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−operated products. Features • 75 A, 55 V • Simulation Models − Temperature Compensated PSPICEt and SABER® Models − Thermal Impedance SPICE and SABER Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • These Devices are Pb−Free www.onsemi.com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO−247−3 CASE 340CK G D S GDS DRAIN (FLANGE) TO−220−3 CASE 340AT DRAIN (FLANGE) G S D2PAK−3 CASE 418AJ MARKING DIAGRAM $Y&Z&3&K 75345X © Semiconductor Components Industries, LLC, 2009 March, 2020 − Rev. 3 $Y &Z &3 &K 75345X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code X = G/P/S ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: HUF75345S3S/D .


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