HV10G25

HV10G25 10mA 25kV 100nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- Introduce: Reference Shape: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: Fast recovery. High reliability design. Low current, high voltage. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface. Applications: HVGT Name: Unit: (mm) Air purification, negative ions. DO-312 Electrostatic voltage doubling circuit. Lead Diameter 0.6±0.03 Copier and X-ray. Other high voltage rectifier circuits. Mechanical Data: Case: epoxy resin molding. Terminal: welding axis. Net weight: 0.34 grams (approx). 26.0 (min) 12.0 (max) Maximum Ratings And Characteristics: (Absolute Maximum Ratings) 26.0 (min) 3.0 (max) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C Non-Repetitive Peak Renerse Voltage VRSM TA=25°C Average Forward Current Maximum IFAVM TA=25°C TOIL=55°C Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS Junction Temperature TJ Allowable Operation Case Temperature Tc Storage Temperature TSTG Electrical Characteristics: TA=25°C (Unless Otherwise Specified) Items Symbols Cond...