HV37-20F 200mA 20kV 80nS
Fast Recovery High Voltage Silicon Rectifier Diode
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HV37-20F 200mA 20kV 80nS
Fast Recovery High
Voltage Silicon Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high
voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast switching.
2. High reliability.
3. High current capability.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-415
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high
voltage power supply.
2. General purpose high
voltage rectifier. .
3. Rectification for X-ray generator high
voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.65 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse
Voltage Non-Repetitive Peak Renerse
Voltage
VRRM VRSM
TA=25°C TA=25°C
20 kV -- kV
Average Forward Current Maximum
IFAVM
TA=40°C TOIL=55°C
130 mA 200 mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
15
A
Junction Temperature
TJ
125 °C
Allowable Operation Case Temperature
Tc
-40~+125
°C
Storage Temperature ELECTRICAL CHARACTERISTICS:
Items
TSTG
...
