HVC131

HVC131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-422B(Z) Rev 2 Feb. 2000 Features Low capacitance.(C=0.8pF max) Low forward resistance. (rf=1.0 Ω max) Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC131 Laser Mark P1 Package Code UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.8 1.0 Unit µA V pF Ω Test Condition VR = 60V I F = 10 mA VR = 1V, f = 1 MHz I F = 10 mA, f = 100 MHz 2 HVC131 Main Characteristic 10 -2 10 -7 10 Forward current I F (A) -4 10-8 Reverse current I R (A) -9 10 10 -6 Ta= 50°C 10 -10 10 -8 Ta= 25°C Ta= 50°C 10 -11 Ta= 25°C 10 -10 10 -12 10 -12 0 0.2 0.4 0.6 0.8 1.0 10 -13 0 20 40 60 80 100 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 3 f=100MHz Forward resistance r f (Ω ) Capacitance C (pF) 10 10 2 1 10 1.0 10 0 0.1 1.0 10 10 Reverse voltage V R (V) 100 -1 10 -5 10 10 Forward current I -4 -3 F 1...