HVC133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-423B(Z) Rev. 2 Feb 2000 Features
• Low c...
HVC133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-423B(Z) Rev. 2 Feb 2000 Features
Low capacitance.(C1=1.0pF max) Low forward resistance. (rf=0.7 Ω max) Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC133 Laser Mark P3 Package Code UFP
Outline
Cathode mark Mark 1
P3
2 1. Cathode 2. Anode
HVC133
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse
voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse
voltage Reverse current Forward
voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.55 Max — 100 0.85 1.0 0.9 0.7 Ω Unit V nA V pF Test Condition I R = 1µA VR = 25V I F = 2 mA VR = 1V, f = 1 MHz VR = 6V, f = 1 MHz I F = 2mA, f = 100 MHz
2
HVC133
Main Characteristic
10
-2
10
-10
10 Forward current I F (A)
-4
(A)
10
-11
10
Reverse current I
-6
R
Ta= 75°C
10
-12
10 -8
Ta= 50°C
Ta= 75°C Ta= 50°C
10
-10
10-13
Ta= 25°C
Ta= 25°C
10
-12
0
0.6 0.8 0.2 0.4 Forward
voltage VF (V)
1.0
10
-14
0
5
10
15
20
25
30
Reverse
voltage VR (V) Fig.2 Reverse current Vs. Reverse
voltage
Fig.1 Forward current Vs. Forward
voltage
10 f=1MHz
3
f=100MHz
Forward resistance r f (Ω )
10 Capacitance C (pF)
10
2
10
1
1.0
0
10
0.1 0.1
10 1.0 Reverse
voltage VR (V) 10
-1
10
-5
10
-4
10
-3
10
...