HVC359

HVC359 Variable Capacitance Diode for VCXO ADE-208-419A(Z) Rev 0 Dec. 1998 Features High capacitance ratio and good C-V linearity. To be usable at low voltage. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC359 Laser Mark S Package Code UFP Outline Cathode mark Mark 1 S 2 1. Cathode 2. Anode HVC359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability *1 Min — — 24.8 6.0 3.0 — 80 Typ — — — — — — — Max 10 100 29.8 8.3 — 1.5 — Unit nA Test Condition VR = 10V VR = 10V, Ta = 60 °C pF VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz n rs Å\ — Ω V C1/C4 VR = 4V, f = 100 MHz C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V 2 HVC359 Main Characteristic -9 10 Reverse current I R (A) 10 -10 10 -11 10-12 10-13 0 4 8 12 16 Reverse voltage V R (V) 20 Fig.1 Reverse current Vs. Reverse voltage 30 f=1MHz 25 Capacitance C (pF) 20 15 10 5 0 1.0 10 Reverse voltage V R (V) 30 Fig.2 Capacitance Vs. Reverse voltage 3 HVC359 Package Dimensions Unit : mm Cathode Mark 1 S 1.2 ± 0.10 1.6 ± 0.10 2 0.3 ± 0.05 0.8 ± 0.10 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) 0.6 ± 0.10 UFP — SC-79 0.0016...