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HVC362

Hitachi Semiconductor

Variable Capacitance Diode for VCO

HVC362 Variable Capacitance Diode for VCO ADE-208-456(Z) Rev 0 June 1996 Features • High capacitance ratio. (n =3.0.min...


Hitachi Semiconductor

HVC362

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HVC362 Variable Capacitance Diode for VCO ADE-208-456(Z) Rev 0 June 1996 Features High capacitance ratio. (n =3.0.min) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC362 Laser Mark V2 Package Code UFP Outline Cathode mark Mark 1 V2 2 1. Cathode 2. Anode HVC362 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55Å`+125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability Note *1 Min — — 41.6 10.1 3.0 — 80 Typ — — — — — — — Max 10 100 49.9 14.8 — 2.0 — Unit nA Test Condition VR = 10V VR = 10V, Ta =60°C pF VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz n rs — — Ω V C1 / C4 VR = 4V, f = 100 MHz *C=200pF,Both forward and reversedirection 1 pulse. 1. Failure criterion ; IR≥20nA at VR = 10 V 2 HVC362 Main Characteristic -9 10 80 f=1MHz (A) -10 Reverse current IR -11 Capacitance C (pF) 10 60 10 40 10 -12 20 -13 10 0 4 8 12 16 20 0 10-1 1.0 Reverse voltage VR (V) 10 Reverse voltage VR (V) Fig.1 Reverse current Vs. Reverse voltage 2.0 f=100MHz 1.8 1.6 -0.50 Fig.2 Capacitance Vs. Reverse voltage 0 f=1MHz Series resistance rs ( Ω) 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 Reverse voltage VR (V) 102 LF =∆(LogC)/∆(LogVR ) 1.4 -1.00 -1.50 -2.00 -1 10 1.0 Reverse voltage VR (V) 10 Fig.3 S...




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