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HVC372

Hitachi Semiconductor

Variable Capacitance Diode for VCO

HVC372B Variable Capacitance Diode for VCO ADE-208-497(Z) Rev 0 February 1997 Features • High capacitance ratio. (n =2....


Hitachi Semiconductor

HVC372

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HVC372B Variable Capacitance Diode for VCO ADE-208-497(Z) Rev 0 February 1997 Features High capacitance ratio. (n =2.00 min) Good linearity of C-V curve. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC372B Laser Mark B5 Package Code UFP Outline Cathode mark Mark 1 B5 2 1. Cathode 2. Anode HVC372B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min — — 15.0 7.00 2.00 — Typ — — — — — — Max 10 100 17.0 8.50 — 0.4 — Ω pF Unit nA Test Condition VR = 15V VR = 15V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 1V, f = 470 MHz 2 HVC372B Main Characteristic -9 10 30 f=1MHz 25 Reverse current I R (A) -10 (pF) Capacitance C 16 4 8 12 Reverse voltage V R (V) 20 0 10 20 -11 10 15 10 10 -12 5 -13 10 0 10-1 1.0 Reverse voltage V R (V) 10 Fig.1 Reverse current Vs. Reverse voltage Fig.2 Capacitance Vs. Reverse voltage 0.6 f=470MHz 0.5 Series resistance r s (Ω) LF =∆(LogC)/∆(LogVR ) 0 0.4 -0.5 0.3 0.2 -1.0 0.1 0 10-1 -1.5 10-1 1.0 Reverse voltage V R (V) 10 1.0 Reverse voltage V R (V) 10 Fig.3 Series resistance Vs. Reverse voltage Fig.4 Linearity factor Vs. Reverse voltage 3 HVC372B Package Dimensions Unit : mm Cathode Mark 1 B5 1.2 ...




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