HVD359

www.DataSheet4U.com HVD359 Variable Capacitance Diode for VCXO ADE-208-955 (Z) Rev. 0 Jul. 2000 Features High capacitance ratio and good C-V linearity. To be usable at low voltage. Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD359 Laser Mark G Package Code SFP Outline Cathode mark Mark 1 G 2 1. Cathode 2. Anode HVD359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 −55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability * 1 Min   24.8 6.0 3.0  80 Typ        Max 10 100 29.8 8.3  1.5  Unit nA Test Condition VR = 10 V VR = 10 V, Ta = 60°C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1/C4 VR = 4 V, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. pF  Ω V n rs  Notes: 1. Failure criterion ; IR ≥ 20 nA at VR =10 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.0, Jul. 2000, page 2 of 5 HVD359 Main Characteristic 10 -9 Reverse current I R (A) 10 -10 10 -11 10-12 10-13 0 4 8 12 16 Reverse voltage V R (V) 20 Fig.1 Reverse current Vs. Reverse voltage 60 f=1MHz 50 Capacitance C (pF) 40 30 20 10 0 0.1 1.0 Reverse voltage V R (V) 10 Fig.2 Capacitance Vs. Reverse voltage Rev.0, Jul. 2000, page 3 of 5 HVD359 Package Dimens...