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HVL145

Renesas Technology

Silicon Epitaxial Planar Pin Diode

HVL145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0434-0100 (Previous: ADE-208-1597) Rev.1.00 Dec 07...


Renesas Technology

HVL145

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HVL145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0434-0100 (Previous: ADE-208-1597) Rev.1.00 Dec 07, 2004 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max) Extremely small Flat Lead Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL145 Laser Mark 4 Package Code EFP Pin Arrangement Cathode mark Mark 1 4 www.DataSheet4U.com 2 1. Cathode 2. Anode Rev.1.00, Dec 07, 2004, page 1 of 5 HVL145 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 100 0.9 0.45 1.8 — Unit nA V pF Ω V Test Condition VR = 60 V IF = 2 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion; IR > 100 nA at VR = 60 V 2. Please do not use the soldering iron due to avoid high stress to the EFP package. 3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.1.00, Dec 07, 2004, page 2 of 5 HVL145 Main Characteristi...




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