HVM14
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-082C (Z) Rev. 3 May 1993 Features
• Low ...
HVM14
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-082C (Z) Rev. 3 May 1993 Features
Low forward resistance. (rf = 7.0 max) Low capacitance. (C = 0.25pFtyp) MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVM14 Laser Mark H5 Package Code MPAK
Pin Arrangement
3
2
1
(Top View)
1 NC 2 Anode 3 Cathode
HVM14
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse
voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 100 125 –55 to +125 Unit V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward
voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf — Min — — — — 200 Typ — — 0.25 — — Max 1.0 100 — 7.0 — Unit V nA pF Ω V Test Condition I F = 50mA VR = 50V VR = 50V, f = 1MHz I F = 10mA, f = 100MHz *C = 200pF, Both forward and reverse direction 1 pulse.
Note: Failure criterion; IR ≥ 200nA at VR = 50V
10
–1
10 Forward current I F (A)
–3
10
–5
10
–7
10
–9
10
–11
0
0.2
0.4
0.6
0.8
1.0
Forward
voltage VF (V)
Fig.1 Forward current Vs. Forward
voltage
2
HVM14
10
–8
Reverse current I R (A)
10
–9
10
–10
10
–11
10
–12
0
10
40 30 20 Reverse
voltage VR (V)
50
Fig.2 Reverse current Vs. Reverse
voltage
f = 1MHz
10 Capacitance C (pF)
1.0
10
–1
1.0
10 Reverse
voltage VR (V)
10
2
Fig.3 Capacitance Vs. Reverse
voltage
3
HVM14
10
4
f = 100MHz
F...