HVM187S

HVM187S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-055C (Z) Rev. 3 Jun. 1993 Features Low forward resistance. (rf = 5.5 max) MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM187S Laser Mark H3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HVM187S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Per one device Symbol VR IF Pd* Tj Tstg Value 60 50 100 125 –55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf — Min — — — 3.5 200 Typ — — — — — Max 1.0 100 2.4 5.5 — Unit V nA pF Ω V Test Condition I F = 10mA VR = 60V VR = 0V, f = 1MHz I F = 10mA, f = 100MHz *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; IR ≥ 100nA at VR = 60V 10 –2 10 –4 Forward current I F (A) 10–6 10 –8 10–10 10 –12 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 2 HVM187S 10 –8 Reverse current I R (A) 10 –9 10 –10 10 –11 10 –12 0 60 20 80 40 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 10 2 Fig.3 Capacitance Vs. Reverse voltage 3 HVM187S 10 4...