HY1620W/A
N-Channel Enhancement Mode MOSFET
Features
200V/60 A
RDS(ON) = 32 mΩ (typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D G
TO-247-3L
S
D G
TO-3P-3L
Applications
Switching application Power Management for Inverter Systems.
D
G N-Channel MOSFET
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