DatasheetsPDF.com

HY27UF084G2M

Hynix Semiconductor

4Gbit (512K x 8-Bit) NAND Flash

( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF...


Hynix Semiconductor

HY27UF084G2M

File Download Download HY27UF084G2M Datasheet


Description
( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3/ Nov. 2005 1 www.DataSheet4U.com www.DataSheet4U.com Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Document Title 4Gbit (512Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Add ULGA Package. - Figures & texts are added. 2) Add Read ID Table 3) Correct the test Conditions (DC Characteristics table) Test Conditions (ILI, ILO) Before VIN=VOUT=0 to 3.6V History Draft Date Dec. 2004 Remark Initial After VIN=VOUT=0 to Vcc (max) 0.1 3) Change AC Conditions table 4) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 4) Edit System Interface Using CE don’t care. 5) Add Marking Information. 6) Correct Address Cycle Map. 7) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100 Aug. 08. 2005 Preliminary 8) Delete the 1.8V device’s features. Rev. 0.3 / Nov. 2005 2 Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Revision History Revision No. 1) Change AC Characteristics tR Before After 20 25 tCLS 0.2 Before After 12 15 tAR 10 15 tWP 12 15 tDS 12 15 tREA 18 20 tWC 25 30 tRHZ 30 50 tADL 70 100 tCHZ 30 50 tRP 12 15 tCEA 25 35 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)