4Gbit (512K x 8-Bit) NAND Flash
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Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash
4Gb NAND FLASH
HY27UF...
Description
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Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash
4Gb NAND FLASH
HY27UF084G2M
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3/ Nov. 2005 1 www.DataSheet4U.com
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Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash
Document Title
4Gbit (512Mx8bit) NAND Flash Memory Revision History
Revision No.
0.0 Initial Draft. 1) Add ULGA Package. - Figures & texts are added. 2) Add Read ID Table 3) Correct the test Conditions (DC Characteristics table)
Test Conditions (ILI, ILO) Before VIN=VOUT=0 to 3.6V
History
Draft Date
Dec. 2004
Remark
Initial
After VIN=VOUT=0 to Vcc (max)
0.1
3) Change AC Conditions table 4) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 4) Edit System Interface Using CE don’t care. 5) Add Marking Information. 6) Correct Address Cycle Map. 7) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100
Aug. 08. 2005
Preliminary
8) Delete the 1.8V device’s features.
Rev. 0.3 / Nov. 2005
2
Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Revision History
Revision No.
1) Change AC Characteristics tR Before After 20 25 tCLS 0.2 Before After 12 15 tAR 10 15 tWP 12 15 tDS 12 15 tREA 18 20 tWC 25 30 tRHZ 30 50 tADL 70 100 tCHZ 30 50 tRP 12 15 tCEA 25 35 ...
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