HY3306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/130A
RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tes...
HY3306P/B
N-Channel Enhancement Mode
MOSFET
Features
60V/130A
RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
Switching application Power Management for Inverter Systems.
D
G N-Channel
MOSFET
Ordering and Marking Information
S
PB HY3306 HY3306
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code P : TO-220FB-3L
Date Code YYXXX WW
B: TO-263-2L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY3306P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source
Voltage VGSS Gate-Source
Voltage
TJ Maximum Junction Temperature TSTG Storage Temperatu...