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MOSFET. HY3410PM Datasheet



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MOSFET. HY3410PM Datasheet








HY3410PM Datasheet PDF





HY3410PM Datasheet PDF


Part Number

HY3410PM

Description

N-Channel Enhancement Mode MOSFET

Feature HY3410P/M/B/PS/PM/MF Absolute Maximum R atings Symbol Parameter Rating Comm on Ratings (TC=25°C Unless Otherwise N oted) VDSS Drain-Source Voltage VGSS G ate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra nge IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID C.
Manufacture

HOOYI

Datasheet
Download HY3410PM Datasheet

HY3410PM












Part Number

HY3410PM

Description

N-Channel Enhancement Mode MOSFET

Feature HY3410P/M/B/PS/PM/MF Absolute Maximum R atings Symbol Parameter Rating Comm on Ratings (TC=25°C Unless Otherwise N oted) VDSS Drain-Source Voltage VGSS G ate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra nge IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID C.
Manufacture

HOOYI

Datasheet
Download HY3410PM Datasheet

HY3410PM



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