HY628400 Series
512Kx8bit CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organize...
HY628400 Series
512Kx8bit
CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and 4M bits
CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub
CMOS process technology and was designed for high-speed and low power circuit technology. It is particulary well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply
voltage of 2.0V.
Product
Voltage Speed Operation
No. (V) (ns) Current(mA)
HY628400
5.0 55/70/85
10
Note 1. Normal : Normal Temperature
2. Current value are max.
FEATURES
Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part)
- 2.0V(min) data retention Standard pin configuration
- 32pin 525mil SOP - 32pin 400mil TSOP-II (Standard and Reversed)
Standby Current(uA) L LL
100 30
Temperature
(°C) 0~70(Normal)
PIN CONNECTION
A18 A16 A14 A12
A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
SOP
32 Vcc A18 1
31 30 29
A15 A17 /WE
A16 A14 A12
2 3 4
28 A13
A7 5
27 A8
A6 6
26 25
A9 A11
24 /OE
A5 7 A4 8 A3 9
23 22 21 20
A10 /CS I/O8 I/O7
A2 A1 A0 I/O1
10 11 12 13
19 I/O6 I/O2 14
18 17
I/O5 I/O3 I/O4 Vss
15 16
32 Vcc Vcc 32
31 A15 A15 31
30 A17 A17 30
29 /WE /WE 29
28 A13 A13 28
27 A8
A8 27
26 25 24
A9 A11 /OE
A9 A11 /OE
26 25 24
23 22
A10 /CS
A10 /CS
...